Element-specific structural analysis of Si/B4C using resonant X-ray reflectivity. Corrigendum

Resonant X-ray Reflectivity from the Liquid Bi-In Surface

Resonant x-ray reflectivity measurements from the surface of liquid Bi22In78 find only a modest surface Bi enhancement, with 35 at% Bi in the first atomic layer. This is in contrast to the Gibbs adsorption in all liquid alloys studied to date, which show surface segregation of a complete monolayer of the low surface tension component. This suggests that surface adsorption in Bi-In is dominated ...

Accuracy in x-ray reflectivity analysis

The influence of Poisson noise on the accuracy of x-ray reflectivity analysis is studied with an aluminium oxide (AlO) layer on silicon. A null hypothesis which argues that other than the exact solution gives the best fitness is examined with a statistical p-value test using a significance level of α = 0.01. Simulations are performed for a fit instead of a measurement since the exact error caus...

Magnetic X-ray Reflectivity

X-Ray and Neutron Reflectivity

re = 2.818 × 10−15m is the classical electron radius, ρe is the electron density of the material, and μx is the absorption length. With δ > 0 we find that n < 1, which leads to the phenomenon of so-called total external reflection for incident angles αi below the critical angle αc = √ 2δ. Typical values for δ are 10−5 . . . 10−6, and thus αc is in the range of 0.1 ◦ . . . 0.5◦. For simplicity, ...

Corrigendum: Dark-field X-ray microscopy for multiscale structural characterization

The authors inadvertently omitted Frederik Stöhr, who developed the silicon condenser lens used for the acquisition of data presented in this Article, from the author list. This has now been corrected in both the PDF and HTML versions of the Article.